M. Afanasova (Ryazan State University, Ryazan, Russia)
O. Andreeva (Tumen Thermal Networks OAO "TRGK", Tobolsk, Russia)
T.L. Boyadjiev (Joint Institute for Nuclear Research, Dubna, Russia)
E. Castro (Universidade do Porto, Porto, Portugal)
O. Chalaev (University of Basel, Basel, Switzerland)
A. Chaplik (Institute of Semiconductor Physics, Novosibirsk, Russia)
A. Yu. Cherny (Joint Institute for Nuclear Research, Dubna, Russia)
B. Colin (University of Leeds, United Kingdom)
M. Dineykhan (Joint Institute for Nuclear Research, Dubna, Russia)
A. Dubois (Ryazan Institute of Open Education, Ryazan, Russia)
A.V. Eletskii (Kurchatov Institute, Moscow, Russia)
J. Fabian (Institute for Theoretical Physics, Regensburg, Germany)
L. A. Falkovsky (Landau Institute for Theoretical Physics, Moscow, Russia)
M. Fardmanesh (Sharif University of Technology, Tehran, Iran)
C. Gadermaier (Jozef-Stefan Institute, Lubljana, Slovenia)
E. Goldobin (University of Tuebingen, Tuebingen, Germany)
A. Golubov (University of Twente, Enschede, Netherlands)
A.O. Govorov (Ohio University, Athens, USA )
P.M. Grant (W2AGZ Technologies, San Jose, USA)
S.Yu. Grigorev (Joint Institute for Nuclear Research, Dubna, Russia)
F. Guinea (Instituto de Ciencia de Materiales de Madrid. CSIC, Madrid, Spain)
D.R.Gulevich (Loughborough University, Loughborough, United Kingdom)
M. Hamdipour (Institute for Advanced Studies in Basic Sciences, Zanjan, Iran)
P. Hawrylak (Institute for Microstructural Sciences, Ottawa, Canada )
K. Hirata (National Institute for Materials Science, Tsukuba, Japan)
A. Irie (Utsunomiya University, Utsunomiya, Japan)
B. von Issendorff (Universitaet Freiburg, Freiburg, Germany)
V.A. Ivanov (Kurnakov Institute of General and Inorganic Chemistry RAS, Moscow, Russia)
J.M. Jedrzejewski (University of Wroclaw, Wroclaw, Poland)
K. Kadowaki (University of Tsukuba, Tsukuba, Japan)
M. Katsnelson (Radboud University Nijmegen, Nijmegen, Netherlands)
M.M. Khapaev (Moscow State University, Moscow, Russia)
D.V. Khveshchenko (University of North Carolina, Chapel Hill, USA)
S.-J. Kim (Cheju National University, Cheju, Korea)
N. Klenov (Moscow State University, Moscow, Russia)
M. Kolahchi (Institute for Advanced Studies in Basic Sciences, Zanjan, Iran)
Yu.A. Kolesnichenko (Institute for Low Temperatures, Kharkov, Ukraine)
V. Kondratyev (Taras Shevchenko National University, Kiev, Ukraine)
T. Kontos (Centre National de la Recherche Scientifique, Paris, France)
M.J. Korkusinski (Institute for Microstructural Sciences, Ottawa, Canada)
V. Kornev (Moscow State University, Moscow, Russia)
A. Korol (Ioffe Physical-Technical Institute, St.-Petersburg, Russia/Frankfurt Institute for Advanced Studies, Frankfurt am Main, Germany)
Z.Ya. Kosakovskaya (Institute of Radio-Engineering and Electronics RAS, Moscow, Russia)
A. Koshelev (Argonne National Laboratory, Argonne, USA)
V.M. Kovalev (Institute of Semiconductor Physics, Novosibirsk, Russia)
T. Koyama (Tohoku University, Sendai, Japan)
S.V. Kozyrev (St. Petersburg State Polytechnical University, St. Petersburg, Russia)
V.P. Krainov (Moscow Institute of Physics and Technology, Dolgoprudny, Russia)
E.A. Krasavin (Joint Institute for Nuclear Research, Dubna, Russia)
V.M. Krasnov (Stockholm University, Stockholm, Sweden)
A. I. Kuklin (Joint Institute for Nuclear Research, Dubna, Russia)
G. Kumar (Indian Institute of Technology, New Delhi, India)
V. Kurin (Institute for Physics of Microstructures RAS, Nizhny Novgorod, Russia)
F.V. Kusmartsev (Loughborough University, Loughborough, United Kingdom)
U. Kutliev (Urgench State University, Urganch, Uzbekistan)
Yu. Latyshev (Institute of Radio-Engineering and Electronics RAS, Moscow, Russia)
H.-J. Lee (Pohang University of Science and Technology, Pohang, Korea)
I.S. Lobanov (St.-Petersburg State University of Information Technologies, St.-Petersburg, Russia)
V. Lotoreichik (St.-Petersburg State University of Information Technologies, St.-Petersburg, Russia)
Yu.E. Lozovik (Institute of Spectroscopy, Troitsk, Russia)
M. Lu-Dac (Institute Jozef Stefan, Ljubljana, Slovenia)
M. Machida (Japan Atomic Energy Agency, Tokyo, Japan)
A.E. Madison (St.-Petersburg State Polytechnical University, St.-Petersburg, Russia)
M.M. Maslov (Moscow Engineering Physics Institute, Moscow, Russia)
H. Matsumoto (Tohoku University, Sendai, Japan)
T. Matsuura (Hokkaido University, Sapporo, Japan)
A.S. Mel'nikov (Institute for Physics of Microstructures RAS, Nyzhny Novgorod, Russia)
V.F. Morozov (Yerevan State University, Yerevan, Armenia)
E. Mozafari (Ferdowsi University, Mashhad, Iran)
A. Namiranian (Iran University of Science & Technology, Tehran, Iran)
W. Nawrocki (Poznan University of Technology, Poznan, Poland)
R.G. Nazmitdinov (Joint Institute for Nuclear Research, Dubna, Russia)
B. Nikolic (University of Delaware, Newark, USA)
H. Nobukane (Hokkaido University, Sapporo, Japan)
A. Orlov (Institute of Radio-Engineering and Electronics RAS, Moscow, Russia)
J. Pachos (University of Leeds, Leeds, United Kingdom)
V. Pavlenko (Institute of Radioengineering and Electronics of the RAS, Moscow, Russia)
N.F. Pedersen (Technology University of Denmark, Lyngby, Denmark)
S.V. Pereverzev (Jet Propulsion Laboratory, Pasadena, USA)
R. Pincak (Joint Institute for Nuclear Research, Dubna, Russia)
I.Yu. Popov (St.-Petersburg State University of Information Technologies, St.-Petersburg, Russia)
S. Postnov (Moscow State University, Moscow, Russia)
M. Pudlak (Institute of Experimental Physics, Slovak Academy of
Sciences, Kosice, Slovakia)
P. Pyatkovskiy (Taras Shevchenko Kyiv National University, Kyiv, Ukraine)
A. V. Rogachev (Joint Institute for Nuclear Research, Dubna, Russia)
J.M. Rost (Max Planck Institute for the Physics of Complex Systems, Dresden, Germany)
D. Ryzhov (Institute for Physics of Microstructures, RAS, Nizhny Novgorod, Russia)
A. Saffarzadeh (Payame Noor University, Tehran, Iran)
A.V. Samokhvalov (Institute for Physics of Microstructures RAS, Nizhny Novgorod, Russia)
H.A.Sarkisyan (Russian-Armenian (Slavonic) University, Yerevan, Armenia)
A. Sergeev (State University of New York, Buffalo, NY, USA)
Ll. Serra (Universitat de les Illes Balears, Palma de Mallorca, Spain)
N. Shahtahmassebi (Ferdowsi University, Mashhad, Iran)
S.N. Shevchenko (Verkin Institute for Low Temperature Physics and Engeneering, Kharkov, Ukraine)
O.V. Sidorov (Moscow State Textile University, Moscow, Russia)
M.A. Silaev (Institute for Physics of Microstructures RAS, Nizhny Novgorod, Russia)
Yu.A. Sitenko (Bogolyubov Institute for Theoretical Physics, Kyiv, Ukraine)
O. Smyrnov (Mechnikov National University, Odessa, Ukraine)
A.V. Solov'yov (Ioffe Physical-Technical Institute, St.-Petersburg, Russia/Frankfurt Institute for Advanced Studies, Frankfurt am Main, Germany)
E. Suraud (Institut de Recherche sur les Systemes Atomiques et Moleculaires Complexes, Toulouse, France)
M. Suzuki (Kyoto University, Kyoto, Japan)
Yu. Tanaka (Nagoya University, Chikusa-ku Nagoya, Japan)
A. Valizadeh (Institute for Advanced Studies in Basic Sciences, Zanjan, Iran)
U. Verma (Indian Institute of Technology, New Delhi, India)
N.D. Vlasii (Bogolyubov Institute for Theoretical Physics, Kyiv, Ukraine)
M. Vozmediano (Instituto de Ciencia de Materiales de Madrid
CSIC, Madrid, Spain)
V. Yukalov (Joint Institute for Nuclear Research, Dubna, Russia)
E. Yukalova (Joint Institute for Nuclear Research, Dubna, Russia)
A. Yurgens (Chalmers University of Technology, Gothenburg, Sweden)
A.D. Zaikin (Institute for Nanotechnology, Karlsruhe, Germany)
M. Zareyan (Institute for Advanced Studies in Basic Sciences, Zanjan, Iran)
S.A. Zhaugasheva (Joint Institute for Nuclear Research, Dubna, Russia)
I. Zutic (State University of New York, Buffalo, USA)